● Introduction
Molecular beam epitaxy (MBE) technology is a way to produce Gallium arsenide epitaxial wafers. This method can produce epitaxial materials with certain structures, such as multiple, multilayer, homogeneous, heterogeneous, superlattice, quantum wells and so on. The crystal has high purity, good chemical stability.
● Characteristic
1.Our company can
manufacture large size crucibles(The maximum diameter can be 12 inches
and the maximum height can be 17 inches).
2.High density (It can reach to 2.19 g/cm3).
3.High purity (>99.99%).
4.High cracking resistance (Excellent coefficient of thermal expansion).
● Parameter
| property | unit | value | |
| density | g/cm3 | 2.0-2.19 | |
| microhardness(knoop)(ab side) | N/mm2 | 691.88 | |
| resistivity | Ω·cm | 3.11×1011 | |
| tensile strength（∥C） | N/mm2 | 153.86 | |
| bend strength | ⊥C | N/mm2 | 243.63 |
| ⊥C | N/mm2 | 197.76 | |
| thermo conductivity | W/m·k | “a” direction “c” direction | |
| (200℃) | W/m·k | 60 2.60 | |
| (900℃) | W/m·k | 43.70 2.80 | |
| dielectric strength（at room temperature） | KV/mm | 56 | |
● Application:
MBE crucibles can be used to synthesize semiconductor crystal and Ⅲ-Ⅴ compounds by Horizontal directional solidification method.
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